Comparative time-resolved study of the XeF2 etching of Mo and Si

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Veyan, J F ^a   Aureau, D ^a   Gogte, Y ^a   Campbell, P ^a   Yan, X M ^b   Chabal, Y J ^a  

^a The University of Texas at Dallas   (United States)

^b QUALCOMM INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SI; IN-SITU; KINETIC STUDY; PROCESSING CONDITION; SI SUBSTRATES; SI SURFACES; SPECTROSCOPIC MEASUREMENTS; SURFACE ATOMS; SURFACE ETCHING; THEORETICAL STUDY; TIME EVOLUTIONS; TIME RESOLVED STUDIES; TIME-RESOLVED INFRARED ABSORPTION;

ABSORPTION SPECTROSCOPY; IN SITU PROCESSING; WET ETCHING;

AMORPHOUS SILICON;

EID: 78751561555     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3520653     Document Type: Article

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