Characterization of high-pressure XeF2 vapor-phase silicon etching for MEMS processing

Journal of Microelectromechanical Systems

Volumn 18, Issue 5, 2009, Pages 1054-1061

  Easter, Clayton ^a   O'Neal, Chad B ^a  

^a LOUISIANA TECH UNIVERSITY   (United States)

Author keywords

Cantilever(s); Gas; Roughness; Si etching; Underetching; XeF2; Xenon difluoride

Indexed keywords

CANTILEVER(S); ROUGHNESS; SI ETCHING; UNDERETCHING; XEF2; XENON DIFLUORIDE;

ATOMIC FORCE MICROSCOPY; COMPOSITE MICROMECHANICS; ETCHING; MEMS; NANOCANTILEVERS; PHOTORESISTS; SILICON; VAPORS; XENON;

MICROELECTROMECHANICAL DEVICES;

EID: 70349984524     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2009.2029976     Document Type: Article

References (9)

1. G. Xuan, T. N. Adam, J. Suehle, E. Fitzgerald, P. Lv, N. Sustersic, M. J. Coppinger, and J. Kolodzey, "Xenon difluoride dry etching of Si, SiGe alloy and Ge," in Proc. 3rd ISTDM, May 15-17, 2006, pp. 1-2.
2. J. D. Brazzle, M. R. Dokmeci, and C. H. Mastrangelo, "Modeling and characterization of sacrificial polysilicon etching using vapor-phase xenon difluoride," in Proc. 17th IEEE Int. Conf. MEMS, 2004, pp. 737-740.
3. P. B. Chu, J. T. Chen, R. Yeh, G. Lin, J. C. P. Huang, B. A. Warneke, and S. J. Pister, "Controlled pulse-etching with xenon difluoride," in Proc. Int. Conf. Solid State Sens. Actuators, TRANSDUCERS, 1997, vol. 1, pp. 665-668.
4. R. Toda, K. Minami, and M. Esashi, "Thin beam bulk micromachining based on RIE and xenon difluoride silicon etching," in Proc. Int. Conf. Solid State Sens. Actuators, TRANSDUCERS, Chicago, IL, 1997, vol. 1, pp. 671-674.
5. I. W. T. Chan, K. B. Brown, R. P. W. Lawson, A. M. Robinson, Y. Ma, and D. Strembicke, "Gas phase pulse etching of silicon for MEMS with xenon difluoride," in Proc. IEEE Can. Conf. Elect. Comput. Eng., 1999, vol. 3, pp. 1637-1642.
6. K. R. Williams, K. Gupta, and M. Wasilik, "Etch rates for micromachining processing - Part II," J. Microelectromech. Syst., vol. 12, no. 6, pp. 761-778, Dec. 2003.
7. 2 gas," in Proc. IEEE CCECE, 2002, vol. 1, pp. 460-464.
8. M. R. Baklanov, A. I. Kistanov, K. P. Mogil'nikov, O. V. Sokolova, D. G. Shamiryan, and Z. S. Yanovitskaya, "Interaction of silicon with xenon difluoride," Surf. Investig., X-Ray Synchrotron Neutron Tech., vol. 12, no. 10, pp. 1217-1226, 1997.
9. F. Fei, Y. Guangli, X. Bin, and W. Yuelin, "A new method for protection of anchors in releasing microstructure by using XeF2 etching process," in Proc. Int. Conf. Solid-State Sens., Actuators, Microsyst., TRANSDUCERS, Jun. 10-14, 2007, pp. 559-562.