Defect properties of ZnO and ZnO:P microwires

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Dietrich, Christof P ^a   Brandt, Matthias ^a   Lange, Martin ^a   Kupper, Johannes ^a   Böntgen, Tammo ^a   Wenckstern, Holger Von ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; DEFECT PROPERTY; HALL EFFECT MEASUREMENT; HIGH QUALITY; MICRO WIRE; N-TYPE CONDUCTIVITY; PHOSPHORUS-DOPED; RECOMBINATION PROCESS; UV SPECTRAL RANGES; VAPOR PHASE TRANSPORT; ZNO;

CATHODOLUMINESCENCE; DEFECTS; DOPING (ADDITIVES); HALL EFFECT; MAGNETIC FIELD EFFECTS; PHOSPHORUS;

ZINC OXIDE;

EID: 78651596686     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3530610     Document Type: Article

References (26)

1. Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan, Adv. Mater. 15, 353 (2003).
2. H. J. Fan, P. Werner, and M. Zacharias, Small 2, 700 (2006).
3. Y. W. Heo, D. P. Norton, L. C. Tien, Y. Kwon, B. S. Kang, F. Ren, S. J. Pearton, and J. R. LaRoche, Mater. Sci. Eng. R. 47, 1 (2004).
4. S. J. Pearton, D. P. Norton, and F. Ren, Small 3, 1144 (2007).
5. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, and H. von Wenckstern, Phys. Status Solidi A 207, 1437 (2010).
6. E. Schlenker, A. Bakin, T. Weimann, P. Hinze, D. H. Weber, A. Gölzhäuser, H.-H. Wehmann, and A. Waag, Nanotechnology 19, 365707 (2008).
7. B. Pérez-García, J. Zúñiga-Pérez, V. Muñoz-Sanjosé, J. Colchero, and E. Palacios-Lidón, Nano Lett. 7, 1505 (2007).
8. G. Zimmermann, M. Lange, B. Q. Cao, M. Lorenz, and M. Grundmann, Phys. Status Solidi (RRL) 4, 82 (2010).
9. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
10. K.-K. Kim, H.-S. Kim, D.-K. Hwang, J.-H. Lim, and S.-J. Park, Appl. Phys. Lett. 83, 63 (2003).
11. S. Limpijumnong, S. B. Zhang, S. H. Wei, and C. H. Park, Phys. Rev. Lett. 92, 155504 (2004).
12. A. Allenic, W. Guo, Y. B. Chen, M. B. Katz, G. Y. Zhao, Y. Che, Z. D. Hu, B. Liu, S. B. Zhang, and X. Q. Pan, Adv. Mater. 19, 3333 (2007).
13. M. Brandt, H. von Wenckstern, H. Schmidt, A. Rahm, G. Biehne, G. Benndorf, H. Hochmuth, M. Lorenz, C. Meinecke, T. Butz, and M. Grundmann, J. Appl. Phys. 104, 013708 (2008).
14. C. N. R. Rao, G. Gundiah, F. L. Deepak, A. Govindaraj, and A. K. Cheetham, J. Mater. Chem. 14, 440 (2004).
15. S.-H. Na and C.-H. Park, J. Korean Phys. Soc. 54, 867 (2010).
16. T. Nobis, A. Rahm, C. Czekalla, M. Lorenz, and M. Grundmann, Superlattices Microstruct. 42, 333 (2007).
17. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegeis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboek, and A. V. Rodina, Phys. Status Solidi B 241, 231 (2004).
18. C. P. Dietrich, M. Lange, G. Benndorf, J. Lenzner, M. Lorenz, and M. Grundmann, New J. Phys. 12, 033030 (2010).
19. B. Q. Cao, M. Lorenz, M. Brandt, H. von Wenckstern, J. Lenzner, G. Biehne, and M. Grundmann, Phys. Status Solidi (RRL) 2, 37 (2008).
20. P. J. Li, Z. M. Liao, X. Z. Zhang, X. J. Zhang, H. C. Zhu, J. Y. Gao, K. Laurent, Y. Leprince-Wang, N. Wang, and D. P. Yu, Nano Lett. 9, 2513 (2009).
21. C. P. Dietrich, M. Lange, G. Benndorf, H. von Wenckstern, and M. Grundmann, Solid State Commun. 150, 379 (2010).
22. D. Bimberg, M. Sondergeld, and E. Grobe, Phys. Rev. B 4, 3451 (1971).
23. M. Grundmann and C. P. Dietrich, J. Appl. Phys. 106, 123521 (2009).
24. H. von Wenckstern, M. Brandt, H. Schmidt, G. Biehne, R. Pickenhain, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. A: Mater. Sci. Process. 88, 135 (2007).
25. F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, H. von Wenckstern, H. Schmidt, G. Biehne, H. Hochmuth, and M. Grundmann, Physica B 401-402, 378 (2007).
26. M. Brandt, H. von Wenckstern, C. Meinecke, T. Butz, H. Hochmuth, M. Lorenz, and M. Grundmann, J. Vac. Sci. Technol. B 27, 1693 (2008).