SCOPUS 정보 검색 플랫폼

Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 1785-1789

Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect

(6) Kang, T Y a Xiu, Y Y b Liu, C Z b,c Hui, L b Wang, J J b Tong, W P a

a NORTHEASTERN UNIVERSITY (China)

b SHENYANG AEROSPACE UNIVERSITY (China)

c INSTITUTE OF METAL RESEARCH (China)

Author keywords

Bi segregation; Interconnect; Intermetallic compound growth; Kinetics

Indexed keywords

AGING PROCESS; AGING TIME; BI SEGREGATION; FRACTURE MODE; GROWTH BEHAVIOR; INTERCONNECT; INTERFACIAL REACTIONS; INTERMETALLIC COMPOUND GROWTH; INTERMETALLIC COMPOUND GROWTHS; INTERMETALLIC COMPOUNDS;

BISMUTH; BRITTLE FRACTURE; DUCTILE FRACTURE; GROWTH KINETICS; INTERMETALLICS; MICROELECTRONICS; SEGREGATION (METALLOGRAPHY); TIN;

BISMUTH COMPOUNDS;

EID: 78651374709 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.10.040 Document Type: Article

Times cited : (44)

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