Ferromagnetism induced by donor-related defects in Co-doped ZnO thin films

Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 2149-2153

  Zhang, Liqiang ^a   Ye, Zhizhen ^a   Lu, Bin ^a   Lu, Jianguo ^a   Zhang, Yinzhu ^a   Zhu, Liping ^a   Huang, Jingyun ^a   Zhang, Weiguang ^a   Huang, Jun ^a   Zhang, Jun ^a   Jiang, Jie ^a   Wu, Kewei ^a   Xie, Zhi ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Co doped ZnO thin film; Diluted magnetic semiconductor; Pulsed laser deposition

Indexed keywords

AS-GROWN; CO-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTORS; DONOR DENSITY; ELECTRON CONCENTRATION; HIGH RESISTIVITY; N-TYPE CONDUCTIVITY; P-TYPE BEHAVIORS; P-TYPE CONDUCTIVITY; PULSED LASER; ROOM-TEMPERATURE FERROMAGNETISM; SAPPHIRE SUBSTRATES; SECONDARY PHASIS; X-RAY ABSORPTION NEAR-EDGE STRUCTURE; ZNO;

ANNEALING; DEFECTS; DEPOSITION; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FERROMAGNETISM; GALLIUM ALLOYS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; OXYGEN VACANCIES; PARAMAGNETISM; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SODIUM; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY SPECTROSCOPY; X RAYS; ZINC; ZINC OXIDE;

COBALT;

EID: 78651351879     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.10.171     Document Type: Article

References (39)

1. J.M.D. Coey, M. Venkatesan, and C.B. Fitzgerald Nat. Mater. 4 2005 173
2. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand Science 287 2000 1019
3. A. Singhal J. Alloys Compd. 507 2010 312
4. M.M. Selim, N.M. Deraz, O.I. Elshafey, and A.A. El-Asmy J. Alloys Compd. 506 2010 541
5. L.H. Van, M.H. Hong, and J. Ding J. Alloys Compd. 449 2008 207
6. Z.L. Lu, W. Miao, W.Q. Zou, M.X. Xu, and F.M. Zhang J. Alloys Compd. 494 2010 392
7. J.J. Gu, L.H. Liu, H.T. Li, Q. Xu, and H.Y. Sun J. Alloys Compd. 508 2010 516
8. D. Paul Joseph, S. Ayyappan, and C. Venkateswaran J. Alloys Compd. 415 2006 225
9. R.K. Singhal, Arvind Samariya, Y.T. Xing, Sudhish Kumar, S.N. Dolia, U.P. Deshpande, T. Shripathi, and Elisa B. Saitovitch J. Alloys Compd. 496 2010 324
10. Y. Wang, L. Sun, L. Kong, J. Kang, X. Zhang, and R. Han J. Alloys Compd. 423 2006 256
11. C. Song, S.N. Pan, X.J. Liu, X.W. Li, F. Zeng, W.S. Yan, B. He, and F. Pan J. Phys.: Condens. Matter 19 2007 176229
12. K. Sato, and H. Katayama-Yoshida Phys. Status Solidi B 229 2002 673
13. N.A. Spaldin Phys. Rev. B 69 2004 125201
14. O.D. Jayakumar, I.K. Gopalakrishnan, and S.K. Kulshreshtha Adv. Mater. 18 2006 1857
15. N. Khare, J. Menno, M. Kapper, Mark G. Wei, Judith L. Blamire, and MacManus-Driscoll Adv. Mater. 18 2006 1449
16. A. Dana, Schwartz, R. Daniel, and Gamelin Adv. Mater. 16 2004 23
17. C.D. Pemmaraju, R. Hanafin, T. Archer, H.B. Braun, and S. Sanvitoo Phys. Rev. B 78 2008 054428
18. Z.Z. Ye, L.Q. Zhang, J.Y. Huang, Y.Z. Zhang, L.P. Zhu, B. Lu, J.G. Lu, L. Wang, Y.Z. Jin, J. Jiang, Y. Xue, J. Zhang, S.S. Lin, and D. Yang J. Semicond. 30 2009 081001
19. L. Yang, Z.Z. Ye, L.P. Zhu, Y.J. Zeng, Y.F. Lu, and B.H. Zhao J. Electron. Mater. 36 2007 498
20. T. Prasada Rao, and M.C. Santhosh Kumar J. Alloys Compd. 506 2010 788
21. L.P. Zhu, Z.G. Ye, X.T. Wang, Z.Z. Ye, and B.H. Zhao Thin Solid Films 518 2010 1879
22. C.H. Park, S.B. Zhang, and S.H. Wei Phys. Rev. B 66 2002 073202
23. J.G. Lu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, L.P. Zhu, Appl. Phys. Lett. 85 (2004) 3134.
24. K.J. Kim, and Y.R. Park Appl. Phys. Lett. 81 2002 1420
25. D. Paul Joseph, M. Saravanan, B. Muthuraaman, P. Renugambal, S. Sambasivam, S. Philip Raja, P. Maruthamuthu, and C. Venkateswaran Nanotechnology 19 2008 485707
26. Y.F. Yan, J.B. Li, S.H. Wei, and M.M. Al-Jassim Phys. Rev. Lett. 98 2007 135506
27. T.S. Moss Proc. Phys. Soc. Lond. Ser. B 67 1954 775
28. K.A. Griffin, A.B. Pakhomov, C.M. Wang, S.M. Heald, and Kannan M. Krishnan Phys. Rev. Lett. 94 2005 157204
29. T.F. Shi, S.Y. Zhu, Z.H. Sun, S.Q. Wei, and W.H. Liu Appl. Phys. Lett. 90 2007 102108
30. K. Samanta, P. Bhattacharya, J.G.S. Duque, W. Iwamoto, C. Rettori, P.G. Pagliuso, and R.S. Katiyar Solid State Commun. 147 2008 305
31. F. Pan, C. Song, X.J. Liu, Y.C. Yang, and F. Zeng Mater. Sci. Eng. R 62 2008 1
32. K.R. Kittilstved, W.K. Liu, and D.R. Gamelin Nat. Mater. 59 2006 291
33. M. Fonin, G. Mayer, and E. Biegger J. Phys.: Conf. Ser. 100 2008 042034
34. G.H. Kim, D.L. Kim, B.D. Ahn, S.Y. Lee, and H.J. Kim Microelectron. J. 40 2009 272
35. M.N. Islam, T.B. Ghosh, K.L. Chopra, and H.N. Acharya Thin Solid Films 280 1996 20
36. L.Q. Zhang, Z.Z. Ye, J.G. Lu, B. Lu, Y.Z. Zhang, L.P. Zhu, J. Zhang, D. Yang, K.W. Wu, J. Huang, and Z. Xie J. Phys. D: Appl. Phys. 43 2010 015001
37. S.A. Sudenikin, and M. Cocivera J. Appl. Phys. 91 2002 5060
38. H.S. Kang, J.S. Kang, J.W. Kim, and S.Y. Lee J. Appl. Phys. 95 2004 1246
39. M. Ivill, S.J. Pearton, S. Rawal, L. Leu, P. Sadik, R. Das, A.F. Hebard, M. Chisholm, J.D. Budai, and D.P. Norton New. J. Phys. 10 2008 065002