Influence of p-type and n-type dopants on the magnetic properties of ZnCuO based diluted magnetic semiconductor thin films

Journal of Physics D: Applied Physics

Volumn 43, Issue 1, 2010, Pages

  Zhang, L Q ^a   Ye, Z Z ^a   Lu, J G ^a   Lu, B ^a   Zhang, Y Z ^a   Zhu, L P ^a   Zhang, J ^a   Yang, D ^a   Wu, K W ^a   Huang, J ^a   Xie, Z ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

C-AXIS ORIENTATIONS; CO-DOPED ZNO; CU-DOPED ZNO; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC BEHAVIOUR; HALL EFFECT MEASUREMENT; HEXAGONAL WURTZITE; HIGH RESISTIVITY; N-TYPE DOPANTS; OXYGEN DEFECT; P-TYPE; P-TYPE DOPANT; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SAPPHIRE SUBSTRATES; ZNO STRUCTURES;

CARRIER CONCENTRATION; CORUNDUM; DEPOSITION; DOPING (ADDITIVES); FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; OXYGEN; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SODIUM; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE; ZINC SULFIDE;

COPPER;

EID: 72449164018     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/1/015001     Document Type: Article

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