Electrical and optical properties of Al-doped ZnO films deposited by hollow cathode gas flow sputtering

Thin Solid Films

Volumn 517, Issue 10, 2009, Pages 3048-3052

  Takeda, Hiroshi ^a   Sato, Yasushi ^a   Iwabuchi, Yoshinori ^b   Yoshikawa, Masato ^b   Shigesato, Yuzo ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b BRIDGESTONE CORPORATION   (Japan)

Author keywords

Al doped ZnO (AZO); Gas flow sputtering (GFS); Hollow cathode discharge; Transparent conductive oxide (TCO); ZnO

Indexed keywords

AERODYNAMICS; ELECTRODEPOSITION; FLOW OF GASES; GASES; INDUCTIVELY COUPLED PLASMA; OPTICAL FILMS; OPTICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC ALLOYS; ZINC OXIDE;

AL-DOPED ZNO (AZO); GAS FLOW SPUTTERING (GFS); HOLLOW CATHODE DISCHARGE; TRANSPARENT CONDUCTIVE OXIDE (TCO); ZNO;

ALUMINUM;

EID: 61449245557     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.114     Document Type: Article

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