Fabrication of low resistivity tin-doped indium oxide films with high electron carrier densities by a plasma sputtering method

Vacuum

Volumn 83, Issue 3, 2008, Pages 548-551

  Kono, Akihiko ^a   Feng, Zongbao ^a   Nouchi, Norimoto ^a   Shoji, Fumiya ^a  

^a KYUSHU KYORITSU UNIVERSITY   (Japan)

Author keywords

Hot cathode plasma sputtering; Oxygen vacancy; Tin doped indium oxide film

Indexed keywords

INDIUM; INDIUM COMPOUNDS; OPTICAL DESIGN; PHOTOCURRENTS; PLASMAS; TIN; TITANIUM COMPOUNDS;

CATHODE PLASMAS; ELECTRON CARRIERS; GLASS SUBSTRATES; HOT-CATHODE PLASMA SPUTTERING; LOW RESISTIVITY; OXYGEN VACANCY; PLASMA SPUTTERING; TIN-DOPED INDIUM OXIDE; TIN-DOPED INDIUM OXIDE FILM;

OXIDE FILMS;

EID: 52949128746     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2008.04.039     Document Type: Article

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