Structure and characteristics of ultrathin indium tin oxide films

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Guo, Er Jia ^a   Guo, Haizhong ^a   Lu, Huibin ^a   Jin, Kuijuan ^a   He, Meng ^a   Yang, Guozhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE MODEL; CRITICAL THICKNESS; ELECTRICAL TRANSPORT PROPERTIES; EPITAXIALLY GROWN; FOUR-PROBE METHODS; INDIUM TIN OXIDE; INDIUM TIN OXIDE FILMS; LASER MOLECULAR BEAM EPITAXY; OPTICAL TRANSMITTANCE; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INDIUM; INDIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MONOLAYERS; OPTICAL PROPERTIES; SEMICONDUCTOR INSULATOR BOUNDARIES; TIN; TIN OXIDES; TRANSPORT PROPERTIES; ULTRATHIN FILMS; X RAY DIFFRACTION;

OXIDE FILMS;

EID: 78651297502     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536531     Document Type: Article

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