Low-noise solar-blind photodetectors based on LaAlO3 single crystal with transparent indium-tin-oxide electrode as detection window

Applied Optics

Volumn 49, Issue 29, 2010, Pages 5678-5681

  Guo, Er Jia ^a   Lu, Hui Bin ^a   He, Meng ^a   Jin, Kui Juan ^a   Yang, Guo Zhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTROMAGNETIC SHIELDING; INDIUM; PHOTODETECTORS; PHOTONS; SILVER; SINGLE CRYSTALS; THIN FILMS; TIN;

BAND-GAP EXCITATION; DEEP ULTRAVIOLET; DETECTION WINDOWS; EPITAXIALLY GROWN; INDIUM TIN OXIDE; INDIUM TIN OXIDE ELECTRODES; ITO THIN FILMS; SOLAR-BLIND PHOTODETECTORS;

TIN OXIDES;

EID: 78349289695     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.49.005678     Document Type: Article

References (14)

1. H. Jiang and T. Egawa, "Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes," Jpn. J. Appl. Phys. 47, 1541-1543 (2008).
2. 1-xN heterojunction p-i-n photodiode," Appl. Phys. Lett. 80, 3754-3756 (2002).
3. 1-xN for solar-blind UV detectors," J. Cryst. Growth 231, 366-370 (2001).
4. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, "193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors," Appl. Phys. Lett. 92, 053501 (2008).
5. Y. Koide, M. Liao, and J. Alvarez, "Thermally stable solarblind diamond UV photodetector," Diam. Rel. Mater. 15, 1962-1966 (2006).
6. M. Bevilacqua and R. B. Jackman, "Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices," Appl. Phys. Lett. 95, 243501 (2009).
7. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, "MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range," Appl. Phys. Lett. 93, 173505 (2008).
8. 3 single crystal," Opt. Lett. 34, 1675-1677 (2009).
9. 3 single crystal," J. Phys. D 43, 015402 (2010).
10. Y. Z. Chiou and J. J. Tang, "GaN photodetectors with transparent indium tin oxide electrodes," Jpn. J. Appl. Phys. 43, 4146-4149 (2004).
11. M. L. Lee, P. F. Chi, and J. K. Sheu, "Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio," Appl. Phys. Lett. 94, 013512 (2009).
12. W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, "Is indium tin oxide a suitable electrode in organic solar cells- Photovoltaic properties of interfaces in organic p/n junction photodiodes," Appl. Phys. Lett. 88, 093504 (2006).
13. G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, "Laser molecular beam epitaxy and characterization of perovskite oxide thin films," J. Cryst. Growth 227, 929 (2001).
14. P. W. Peacock and J. Robertson, "Band offsets and Schottky barrier heights of high dielectric constant oxides," J. Appl. Phys. 92, 4712-4721 (2002).