Limits to n-type doping in Ge: Formation of donor-vacancy complexes

Defect and Diffusion Forum

Volumn 273-276, Issue , 2008, Pages 93-98

  Coutinho, J ^a   Janke, C ^b   Carvalho, A ^b   Oberg S ^c   Torres, V J B ^a   Jones, R ^b   Briddon, P R ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Compensation; Dopants; Germanium; Vacancies

Indexed keywords

DIFFUSION; DOPING (ADDITIVES); SILICON; SOLUBILITY; VACANCIES;

COMPENSATION; ELECTRONICS APPLICATIONS; IMPLANTATION DAMAGE;

SEMICONDUCTING GERMANIUM;

EID: 40949090228     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.273-276.93     Document Type: Conference Paper

References (24)

1. D.Y.C. Lie, A. Vantomme, F. Eisen, T. Vreeland Jr., M.A. Nicolet, T.K. Carns, V. Arbet-Engels and K.L. Wang: J. Appl. Phys. Vol. 74 (1993), p. 6039.
2. J. Coutinho, R. Jones, P. R. Briddon and S. Öberg: Phys. Rev. B Vol. 62 (2000), p. 10824.
3. C.O. Chui, K. Gopalakrishnan, P.B. Griffin, J.D. Plummer and K.C. Saraswat: Appl. Phys. Lett. Vol. 83 (2003), p. 3275.
4. Germanium-based Technologies: From Materials to Devices, edited by E. Simoen and C. Claeys, (Elsevier, London 2007).
5. E. Simoen, A. Satta, A. D'Amore, T. Janssens, T. Clarysse, K. Martens, B. De Jaeger, A. Benedetti, I. Haflijk, B. Brijs, M. Meuris and W. Vandervorst: Mater. Sci. Semicond. Process. Vol. 9 (2006), p. 634.
6. K. Cho, M. Numan, T.G. Finstad, W.K. Chu, J. Liu and J.J. Wortman: Appl. Phys. Lett. Vol. 47 (1985), p. 1321.
7. H. Bracht and S. Brotzmann: Mater. Sci. Semicond. Process. Vol. 9 (2006), p. 471.
8. H.M. Pinto, J. Coutinho, V.J.B. Torres, S. Öberg and P.R. Briddon: Mater. Sci. Semicond. Process. Vol. 9 (2006), p. 634.
9. A. Fazzio, A. Janotti, A.J. da Silva and R. Mota: Phys. Rev. B Vol. 61 (2000), p. R2401.
10. A. Carvalho, R. Jones, C. Janke, J.P. Goss, J. Coutinho, S. Öberg and P.R. Briddon: Submitted.
11. M.D. Moreira, R.H. Miwa and P. Venezuela: Phys. Rev. B Vol. 70 (2004), p. 115215.
12. J. Coutinho, R. Jones, V.J.B. Torres, M. Barroso, S. Öberg and P.R. Briddon: J. Phys.:Condens. Matter Vol. 17 (2005), L521.
13. M. Ramamoorthy and S.T. Pantelides: Phys. Rev. Lett. Vol. 76 (1996), p. 4753.
14. C.E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen and A. Nylandsted Larsen: Appl. Phys. Lett. Vol. 87 (2005), p. 172103.
15. V.P. Markevich, I.D. Hawkins, A.R. Peaker, K.V. Emtsev, V.V. Emtsev, V.V. Litvinov, L.I. Murin and L. Dobaczewski: Phys. Rev, B Vol. 70 (2004), p. 235213.
16. J. Coutinho, S. Öberg, V.J.B. Torres, M. Barroso, R. Jones and P.R. Briddon: Phys. Rev. B Vol. 73 (2006), p. 235213.
17. A. Chroneos, R.W. Grimes and C. Tsamis: Mater. Sci. Semicond. Proc. Vol 9 (2006), p. 536.
18. C. Janke, R. Jones, J. Coutinho, S. Öberg and P.R. Briddon: Submitted.
19. J. Coutinho, V.J.B. Torres, S. Öberg, A. Carvalho, C. Janke, R. Jones and P.R. Briddon: J. Mater. Sci.: Mater. Electron. Vol. 18 (2007), p. 769.
20. P.R. Briddon and R. Jones: Phys. Stat. Sol. (b) Vol. 217 (2000), p. 131.
21. S. Goedecker, M. Teter, and J. Hutter: Phys. Rev. B Vol. 54 (1996), p. 1703.
22. C. Hartwigsen, S. Goedecker, J. Hutter: Phys. Rev. B Vol. 58 (1998), p. 3641.
23. A. Resende, R. Jones, S. Öberg, and P.R. Briddon: Phys. Rev. Lett. Vol. 82 (1999), p. 2111.
24. G.D. Watkins: Physica B Vol. 376-377 (2006), p. 50.