Ga implantation in a MgO-based magnetic tunnel junction with Co 60Fe20B20 layers

IEEE Transactions on Magnetics

Volumn 47, Issue 1 PART 2, 2011, Pages 151-155

  Persson, Anders ^a   Riddar, Frida ^a   Nguyen, Hugo ^a   Ericson, Fredric ^a   Thornell, Greger ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Focused ion beam; gallium implantation; magnetic tunnel junction; tunneling magnetoresistance

Indexed keywords

COERCIVITIES; DEPTH PROFILE; DIPOLE COUPLING; ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS; IMPLANTATION DAMAGE; ION ETCHING; MAGNETIC LAYERS; MAGNETIC MEASUREMENTS; MAGNETIC TUNNEL JUNCTION; METAL DEPOSITION; MGO BARRIER; PINNING LAYERS; PROTOTYPING; SYNTHETIC ANTIFERROMAGNETIC; TUNNELING MAGNETORESISTANCE;

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; BEAM PLASMA INTERACTIONS; CHEMICAL ANALYSIS; COERCIVE FORCE; ELECTRIC RESISTANCE; ELECTRON SPECTROSCOPY; FOCUSED ION BEAMS; ION BOMBARDMENT; IONS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MULTILAYERS; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 78651108734     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2089634     Document Type: Article

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