Controlled fabrication of nano-scale double barrier magnetic tunnel junctions using focused ion beam milling method

Journal of Magnetism and Magnetic Materials

Volumn 303, Issue 2 SPEC. ISS., 2006, Pages

  Wei, H X ^a   Wang, T X ^a   Zeng, Z M ^a   Zhang, X Q ^a   Zhao, J ^a   Han, X F ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Double barrier magnetic tunnel junction (DNMTJ); Focused ion beam etching; Nano scale; Tunneling magnetoresistance (TMR)

Indexed keywords

ION BEAMS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETIC THIN FILMS; MAGNETORESISTANCE; MAGNETRON SPUTTERING; NANOTECHNOLOGY; PHOTOLITHOGRAPHY; TANTALUM COMPOUNDS;

DOUBLE BARRIER MAGNETIC TUNNEL JUNCTION (DNMTJ); FOCUSED ION BEAM ETCHING; ION BEAM MILLING; NANO-SCALE; TUNNELING MAGNETORESISTANCE (TMR);

SEMICONDUCTOR JUNCTIONS;

EID: 33646258506     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2006.01.072     Document Type: Article

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