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Volumn 64, Issue 9-10, 2003, Pages 1533-1537

Optical properties of GaInNAs/GaAs prepared by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

EID: 0042737989     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00212-9     Document Type: Conference Paper
Times cited : (16)

References (13)
  • 11
    • 0005254658 scopus 로고
    • WillardsonR.K.BeerA.C. New York: Academic Press, Chapter 4
    • Bebb H.B., Williams E.W. Willardson R.K., Beer A.C. Semiconductors and Semimetals. vol. 8:1972;Academic Press, New York. Chapter 4, p. 238.
    • (1972) Semiconductors and Semimetals , vol.8 , pp. 238
    • Bebb, H.B.1    Williams, E.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.