Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Pavelescu, E M ^a   Wagner, J ^b   Komsa, H P ^a   Rantala, T T ^a   Dumitrescu, M ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAINAS; LATTICE MATCHING; OPTICAL BAND GAP; POSTGROWTH THERMAL ANNEALING;

ANNEALING; CHEMICAL BONDS; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; NITROGEN; RAMAN SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 27744463893     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2112173     Document Type: Article

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