Analyses and experimental confirmation of removal performance of silicon oxide film in the chemical-mechanical polishing (CMP) process with pattern geometry of concentric groove pads

Wear

Volumn 270, Issue 3-4, 2011, Pages 172-180

  Wei, Chin Chung ^a   Horng, Jeng Haur ^a   Lee, An Chen ^b   Lin, Jen Fin ^c  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Chemical mechanical polishing; Removal rate; Surface topography; Three body abrasion; Wear model

Indexed keywords

ABRASIVE PARTICLES; CHEMICAL-MECHANICAL POLISHING PROCESS; DEPTH OF GROOVE; EXPERIMENTAL CONFIRMATION; GROOVE WIDTH; HYDRODYNAMIC FIELD; HYDRODYNAMIC PRESSURE; PATTERN GEOMETRY; POLISHING PADS; REMOVAL RATE; SOLID CONTACTS; THREE BODY ABRASION; WEAR DEPTH; WEAR MODEL;

ABRASION; ABRASIVES; CHEMICAL ANALYSIS; CHEMICAL MECHANICAL POLISHING; FLUID DYNAMICS; HYDRODYNAMICS; OXIDE FILMS; POLISHING; REYNOLDS EQUATION; SILICON COMPOUNDS; SILICON OXIDES; SURFACE TOPOGRAPHY; TOPOGRAPHY; TRIBOLOGY;

CHEMICAL POLISHING;

EID: 78650678572     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2010.10.057     Document Type: Article

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