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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Trapping of electrons in metal oxide-polymer memory diodes in the initial stage of electroforming

(5) Bory, Benjamin F a Meskers, Stefan C J a Janssen, Reń A J a Gomes, Henrique L b De Leeuw, Dago M c

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b UNIVERSITY OF ALGARVE (Portugal)

c PHILIPS RESEARCH LABORATORIES (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; GEOMETRICAL CAPACITANCE; INITIAL STAGES; METAL OXIDE INTERFACE; METAL OXIDES; NON-VOLATILE; OXIDE LAYER; POLYMER DIODE; POLYMER MEMORY; QUASI-STATIC CAPACITANCE; RESISTIVE SWITCHING MEMORIES; TRAPPED ELECTRONS;

CAPACITANCE; DIODES; ELECTROCHEMISTRY; ELECTROFORMING; ELECTROMETALLURGY; METALLIC COMPOUNDS; POLYMERS;

ELECTRONS;

EID: 78650647780 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3520517 Document Type: Article

Times cited : (17)

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