SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 13, 2009, Pages

Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide "switching layer"

(3) Muller R a Genoe, J a Heremans, P a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AG-TCNQ; CONDUCTIVE CHANNELS; CURRENT INTENSITY; ELECTRICAL SWITCHING; ELECTROCHEMICAL PROCESS; MEMORY CELL; ON STATE CURRENT; SILICON DIOXIDE; SIMULTANEOUS GROWTH; SWITCHING MECHANISM; TETRACYANOQUINODIMETHANE; TIME DELAYED;

DISSOLUTION; METAL RECOVERY; SILICA; SILICON OXIDES; SILVER;

SWITCHING;

EID: 70349694374 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3242415 Document Type: Article

Times cited : (10)

References (33)

1
- 41149099157
- 0036-8075. 10.1126/science.1153909
- G. I. Meijer, Science 0036-8075 319, 1625 (2008). 10.1126/science.1153909
- (2008) Science , vol.319 , pp. 1625
- Meijer, G.I.¹

2
- 55549101230
- 0079-6700. 10.1016/j.progpolymsci.2008.08.001
- Q. D. Ling, D. J. Liaw, C. X. Zhu, D. S. H. Chan, E. T. Kang, and K. G. Neoh, Prog. Polym. Sci. 0079-6700 33, 917 (2008). 10.1016/j.progpolymsci.2008. 08.001
- (2008) Prog. Polym. Sci. , vol.33 , pp. 917
- Ling, Q.D.¹ Liaw, D.J.² Zhu, C.X.³ Chan, D.S.H.⁴ Kang, E.T.⁵ Neoh, K.G.⁶

3
- 64749107196
- 1438-1656. 10.1002/adem.200800294
- T. Mikolajick, M. Salinga, M. Kund, and T. Kever, Adv. Eng. Mater. 1438-1656 11, 235 (2009). 10.1002/adem.200800294
- (2009) Adv. Eng. Mater. , vol.11 , pp. 235
- Mikolajick, T.¹ Salinga, M.² Kund, M.³ Kever, T.⁴

4
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater (Weinheim, Ger.) 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater (Weinheim, Ger.) , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

5
- 0000651707
- 0379-6779. 10.1016/0379-6779(82)90007-8
- R. S. Potember, T. O. Poehler, A. Rappa, D. O. Cowan, and A. N. Bloch, Synth. Met. 0379-6779 4, 371 (1982). 10.1016/0379-6779(82)90007-8
- (1982) Synth. Met. , vol.4 , pp. 371
- Potember, R.S.¹ Poehler, T.O.² Rappa, A.³ Cowan, D.O.⁴ Bloch, A.N.⁵

6
- 33750826529
- Preparation and characterisation of amorphous Cu:7,7,8,8- Tetracyanoquinodimethane thin films with low surface roughness via thermal co-deposition
- DOI 10.1016/j.tsf.2006.07.028, PII S0040609006008285
- T. Kever, C. Nauenheim, U. Böttger, and R. Waser, Thin Solid Films 0040-6090 515, 1893 (2006). 10.1016/j.tsf.2006.07.028 (Pubitemid 44716164)
- (2006) Thin Solid Films , vol.515 , Issue.4 , pp. 1893-1896
- Kever, T.¹ Nauenheim, C.² Bottger, U.³ Waser, R.⁴

7
- 33846990409
- CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode
- DOI 10.1063/1.2457342
- R. Müller, R. Naulaerts, J. Billen, J. Genoe, and P. Heremans, Appl. Phys. Lett. 0003-6951 90, 063503 (2007). 10.1063/1.2457342 (Pubitemid 46247706)
- (2007) Applied Physics Letters , vol.90 , Issue.6 , pp. 063503
- Muller, R.¹ Naulaerts, R.² Billen, J.³ Genoe, J.⁴ Heremans, P.⁵

8
- 38549140077
- 0272-9172.
- R. Mueller, J. Billen, R. Naulaerts, O. Rouault, L. Goux, D. J. Wouters, J. Genoe, and P. Heremans, Mater. Res. Soc. Symp. Proc. 0272-9172 997, I01-10 (2007).
- (2007) Mater. Res. Soc. Symp. Proc. , vol.997 , pp. 01-10
- Mueller, R.¹ Billen, J.² Naulaerts, R.³ Rouault, O.⁴ Goux, L.⁵ Wouters, D.J.⁶ Genoe, J.⁷ Heremans, P.⁸

9
- 0033661985
- 0022-4596. 10.1006/jssc.2000.8679
- S. A. O'Kane, R. Cĺrac, H. H. Zhao, X. Ouyang, J. R. Galán-Mascarós, R. Heintz, and K. R. Dunbar, J. Solid State Chem. 0022-4596 152, 159 (2000). 10.1006/jssc.2000.8679
- (2000) J. Solid State Chem. , vol.152 , pp. 159
- O'Kane, S.A.¹ Cĺrac, R.² Zhao, H.H.³ Ouyang, X.⁴ Galán- Mascarós, J.R.⁵ Heintz, R.⁶ Dunbar, K.R.⁷

10
- 4444277506
- Growth mechanism of vertically aligned Ag(TCNQ) nanowires
- DOI 10.1088/0256-307X/21/9/031
- C.-N. Ye, G.-Y. Cao, X.-L. Mo, F. Fang, X.-Y. Xing, G.-R. Chen, and D.-L. Sun, Chin. Phys. Lett. 0256-307X 21, 1787 (2004). 10.1088/0256-307X/21/9/031 (Pubitemid 39203110)
- (2004) Chinese Physics Letters , vol.21 , Issue.9 , pp. 1787-1790
- Ye, C.-N.¹ Cao, G.-Y.² Mo, X.-L.³ Fang, F.⁴ Xing, X.-Y.⁵ Chen, G.-R.⁶ Sun, D.-L.⁷

11
- 2442602107
- 0038-1098. 10.1016/j.ssc.2004.04.007
- Q. Zhang, L. Z. Kong, Q. J. Zhang, W. J. Wang, and Z. Y. Hua, Solid State Commun. 0038-1098 130, 799 (2004). 10.1016/j.ssc.2004.04.007
- (2004) Solid State Commun. , vol.130 , pp. 799
- Zhang, Q.¹ Kong, L.Z.² Zhang, Q.J.³ Wang, W.J.⁴ Hua, Z.Y.⁵

12
- 20144382229
- Morphology investigation of Ag(TCNQ) synthesized by the vapor-transport reaction method
- DOI 10.1016/j.micron.2005.03.006, PII S0968432805000491
- C. N. Ye, G. Y. Cao, F. Fang, H. H. Xu, X. Y. Xing, D. L. Sun, and G. R. Chen, Micron 0968-4328 36, 461 (2005). 10.1016/j.micron.2005.03.006 (Pubitemid 40772223)
- (2005) Micron , vol.36 , Issue.5 , pp. 461-464
- Ye, C.¹ Cao, G.² Fang, F.³ Xu, H.⁴ Xing, X.⁵ Sun, D.⁶ Chen, G.⁷

13
- 13944271847
- Microscopy investigation of Ag-TCNQ micro/nanostructures synthesized via two solution routes
- DOI 10.1016/j.micron.2004.11.002, PII S0968432804001684
- G. Y. Cao, F. Fang, C. N. Ye, X. Y. Xing, H. H. Xu, D. L. Sun, and G. R. Chen, Micron 0968-4328 36, 285 (2005). 10.1016/j.micron.2004.11.002 (Pubitemid 40263438)
- (2005) Micron , vol.36 , Issue.3 , pp. 285-290
- Cao, G.¹ Fang, F.² Ye, C.³ Xing, X.⁴ Xu, H.⁵ Sun, D.⁶ Chen, G.⁷

14
- 36348974097
- Voltammetric, spectroscopic, and microscopic investigations of electrocrystallized forms of semiconducting AgTCNQ (TCNQ = 7,7,8,8- tetracyanoquinodimethane) exhibiting different morphologies and colors
- DOI 10.1021/cm070780b
- A. R. Harris, A. Nafady, A. P. O'Mullane, and A. M. Bond, Chem. Mater. 0897-4756 19, 5499 (2007). 10.1021/cm070780b (Pubitemid 350150574)
- (2007) Chemistry of Materials , vol.19 , Issue.23 , pp. 5499-5509
- Harris, A.R.¹ Nafady, A.² O'Mullane, A.P.³ Bond, A.M.⁴

15
- 33847253414
- Preparation of metal-TCNQ charge-transfer complexes on conducting and insulating surfaces by photocrystallization
- DOI 10.1021/ja066874o
- A. P. O'Mullane, N. Fay, A. Nafady, and A. M. Bond, J. Am. Chem. Soc. 0002-7863 129, 2066 (2007). 10.1021/ja066874o (Pubitemid 46318278)
- (2007) Journal of the American Chemical Society , vol.129 , Issue.7 , pp. 2066-2073
- O'Mullane, A.P.¹ Fay, N.² Nafady, A.³ Bond, A.M.⁴

16
- 84943611694
- Z. Fan, D. Wang, J. G. Lu, X. Mo, C. Lou, Y. Yao, and G. Chen, Proceedings of the Third IEEE Conference on Nanotechnology, 2003 (unpublished), pp. 588-591.
- (2003) Proceedings of the Third IEEE Conference on Nanotechnology, (Unpublished) , pp. 588-591
- Fan, Z.¹ Wang, D.² Lu, J.G.³ Mo, X.⁴ Lou, C.⁵ Yao, Y.⁶ Chen, G.⁷

17
- 55349089616
- K. Xiao, J. Tao, A. Puretzky, I. Ivanov, S. T. Retterer, S. Pennycook, and D. Geohegan, Adv. Funct. Mat. (Weinheim, Ger.) 18, 3043 (2008).
- (2008) Adv. Funct. Mat. (Weinheim, Ger.) , vol.18 , pp. 3043
- Xiao, K.¹ Tao, J.² Puretzky, A.³ Ivanov, I.⁴ Retterer, S.T.⁵ Pennycook, S.⁶ Geohegan, D.⁷

18
- 40949149456
- 0947-8396. 10.1007/s00339-008-4399-0
- Z. Y. Ji, H. X. Li, Y. L. Liu, and W. P. Hu, Appl. Phys. A: Mater. Sci. Process. 0947-8396 91, 301 (2008). 10.1007/s00339-008-4399-0
- (2008) Appl. Phys. A: Mater. Sci. Process. , vol.91 , pp. 301
- Ji, Z.Y.¹ Li, H.X.² Liu, Y.L.³ Hu, W.P.⁴

19
- 43549117530
- IEEE Conference on Electron Devices and Solid-State Circuits
- D. Y. Tu, C. S. Wang, Z. Y. Ji, W. P. Hu, and M. Liu, IEEE Conference on Electron Devices and Solid-State Circuits, 2005, pp. 575-578.
- (2005) , pp. 575-578
- Tu, D.Y.¹ Wang, C.S.² Ji, Z.Y.³ Hu, W.P.⁴ Liu, M.⁵

20
- 52949138656
- 0003-6951. 10.1063/1.2988272
- W. Zhou, L. Ren, F. Lin, L. Y. Jiao, T. Xue, X. J. Xian, and Z. F. Liu, Appl. Phys. Lett. 0003-6951 93, 123115 (2008). 10.1063/1.2988272
- (2008) Appl. Phys. Lett. , vol.93 , pp. 123115
- Zhou, W.¹ Ren, L.² Lin, F.³ Jiao, L.Y.⁴ Xue, T.⁵ Xian, X.J.⁶ Liu, Z.F.⁷

21
- 40049083103
- 0253-4177.
- D. Tu, Z. Ji, L. Shang, M. Liu, C. Wang, and W. Hu, Chin. J. Semicond. 0253-4177 29, 50 (2008).
- (2008) Chin. J. Semicond. , vol.29 , pp. 50
- Tu, D.¹ Ji, Z.² Shang, L.³ Liu, M.⁴ Wang, C.⁵ Hu, W.⁶

22
- 67749099492
- 1613-6810. 10.1002/smll.200801857
- X. Chen, G. Zheng, J. I. Cutler, J. -W. Jang, and C. A. Mirkin, Small 1613-6810 5, 1527 (2009). 10.1002/smll.200801857
- (2009) Small , vol.5 , pp. 1527
- Chen, X.¹ Zheng, G.² Cutler, J.I.³ Jang, J.-W.⁴ Mirkin, C.A.⁵

23
- 33751574417
- Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories
- DOI 10.1063/1.2388883
- R. Müller, S. De Jonge, K. Myny, D. J. Wouters, J. Genoe, and P. Heremans, Appl. Phys. Lett. 0003-6951 89, 223501 (2006). 10.1063/1.2388883 (Pubitemid 44847620)
- (2006) Applied Physics Letters , vol.89 , Issue.22 , pp. 223501
- Muller, R.¹ De Jonge, S.² Myny, K.³ Wouters, D.J.⁴ Genoe, J.⁵ Heremans, P.⁶

24
- 55849083498
- 0272-9172.
- R. Mueller, J. Billen, A. Katzenmeyer, L. Goux, D. J. Wouters, J. Genoe, and P. Heremans, Mater. Res. Soc. Symp. Proc. 0272-9172 1071, F06-04 (2008).
- (2008) Mater. Res. Soc. Symp. Proc. , vol.1071 , pp. 06-04
- Mueller, R.¹ Billen, J.² Katzenmeyer, A.³ Goux, L.⁴ Wouters, D.J.⁵ Genoe, J.⁶ Heremans, P.⁷

25
- 37549060633
- 0003-6951. 10.1063/1.2827590
- J. Billen, S. Steudel, R. Müller, J. Genoe, and P. Heremans, Appl. Phys. Lett. 0003-6951 91, 263507 (2007). 10.1063/1.2827590
- (2007) Appl. Phys. Lett. , vol.91 , pp. 263507
- Billen, J.¹ Steudel, S.² Müller, R.³ Genoe, J.⁴ Heremans, P.⁵

26
- 50249155339
- 0163-1918.
- K. Aratani, K. Ohba, T. Mizuguchi, S. Yasuda, T. Shiimoto, T. Tsushima, T. Sone, K. Endo, A. Kouchiyama, S. Sasaki, A. Maesaka, N. Yamada, and H. Narisawa, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 783.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 783
- Aratani, K.¹ Ohba, K.² Mizuguchi, T.³ Yasuda, S.⁴ Shiimoto, T.⁵ Tsushima, T.⁶ Sone, T.⁷ Endo, K.⁸ Kouchiyama, A.⁹ Sasaki, S.¹⁰ Maesaka, A.¹¹ Yamada, N.¹² Narisawa, H.¹³

27
- 67649382010
- 0741-3106. 10.1109/LED.2009.2020521
- R. Müller, C. Krebs, L. Goux, D. J. Wouters, J. Genoe, P. Heremans, S. Spiga, and M. Fanciulli, IEEE Electron Device Lett. 0741-3106 30, 620 (2009). 10.1109/LED.2009.2020521
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 620
- Müller, R.¹ Krebs, C.² Goux, L.³ Wouters, D.J.⁴ Genoe, J.⁵ Heremans, P.⁶ Spiga, S.⁷ Fanciulli, M.⁸

28
- 46849100457
- M. Balakrishnan, S. Thermadam, M. Mitkova, and M. Kozicki, Proceedings of the Seventh Annual Non-Volatile Memory Technology Symposium 2006, pp. 104-110.
- (2006) Proceedings of the Seventh Annual Non-Volatile Memory Technology Symposium , pp. 104-110
- Balakrishnan, M.¹ Thermadam, S.² Mitkova, M.³ Kozicki, M.⁴

29
- 35148849058
- 2
- DOI 10.1109/TED.2007.904402
- C. Schindler, S. C. P. Thermadam, R. Waser, and M. N. Kozicki, IEEE Trans. Electron Devices 0018-9383 54, 2762 (2007). 10.1109/TED.2007.904402 (Pubitemid 47541876)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.10 , pp. 2762-2768
- Schindler, C.¹ Thermadam, S.C.P.² Waser, R.³ Kozicki, M.N.⁴

30
- 0004222516
- 5th ed. (Saunders, Philadelphia)
- D. Skoog, F. Holler, and T. Nieman, Principles of Instrumental Analysis, 5th ed. (Saunders, Philadelphia, 1997), pp. 564-590.
- (1997) Principles of Instrumental Analysis , pp. 564-590
- Skoog, D.¹ Holler, F.² Nieman, T.³

31
- 0004222516
- 5th ed. (Saunders, Philadelphia)
- D. Skoog, F. Holler, and T. Nieman, Principles of Instrumental Analysis, 5th ed. (Saunders, Philadelphia, 1997), pp. 622-638.
- (1997) Principles of Instrumental Analysis , pp. 622-638
- Skoog, D.¹ Holler, F.² Nieman, T.³

32
- 0000429277
- 0003-2700. 10.1021/ac00048a022
- T. Horiuchi, O. Niwa, M. Morita, and H. Tabei, Anal. Chem. 0003-2700 64, 3206 (1992). 10.1021/ac00048a022
- (1992) Anal. Chem. , vol.64 , pp. 3206
- Horiuchi, T.¹ Niwa, O.² Morita, M.³ Tabei, H.⁴

33
- 50249186291
- 0003-6951. 10.1063/1.2973042
- K. Peppler, C. Reitz, and J. Janek, Appl. Phys. Lett. 0003-6951 93, 074104 (2008). 10.1063/1.2973042
- (2008) Appl. Phys. Lett. , vol.93 , pp. 074104
- Peppler, K.¹ Reitz, C.² Janek, J.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.