High performance n-type organic-inorganic nanohybrid semiconductors for flexible electronic devices

Organic Electronics

Volumn 12, Issue 2, 2011, Pages 348-352

  Park, Yerok ^a   Han, Kyu S ^a   Lee, Byoung H ^a   Cho, Sangho ^a   Lee, Kwang H ^b   Im, Seongil ^b   Sung, Myung M ^a  

^a Hanyang University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Atomic layer deposition; Molecular layer deposition; Organic thin film transistors; Organic inorganic nanohybrid semiconductors; ZnO

Indexed keywords

ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; II-VI SEMICONDUCTORS; MAGNETIC SEMICONDUCTORS; MECHANICAL STABILITY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

FLEXIBLE ELECTRONIC DEVICES; MOLECULAR LAYER DEPOSITION; N-TYPE ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; ORGANIC-INORGANIC NANOHYBRID; ORGANIC-INORGANIC NANOHYBRID SUPERLATTICES; SEMI-CONDUCTING PROPERTY; THERMAL AND MECHANICAL STABILITIES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 78650608110     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.11.026     Document Type: Article

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