Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation

Journal of the Electrochemical Society

Volumn 145, Issue 7, 1998, Pages 2523-2529

  Shimizu, Hirofumi ^a   Isomae, Seiichi ^a   Minowa, Kyoko ^a   Satoh, Tomomi ^a   Suzuki, Tadashi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; GRAVITATIONAL EFFECTS; VECTORS; X RAY ANALYSIS;

BURGERS VECTORS; GRAVITATIONAL STRESS; SLIP BAND INITIATION; X RAY TOPOGRAPHY;

SILICON WAFERS;

EID: 0032122866     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838672     Document Type: Article

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