Three-dimensional crystalline Si film growth by the Ni silicide mediation

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Kim, Joondong ^a   Han, Chang Soo ^a   Park, Yun Chang ^b   Anderson, Wayne A ^c  

^a Korea Institute of Machine and Materials   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

^c the State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CRYSTALLIZATION; PHOTODIODES; REACTION KINETICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SILICIDES;

SCHOTTKY PHOTODIODE; SILICIDE FORMATION;

SEMICONDUCTING FILMS;

EID: 38849176988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828202     Document Type: Article

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