Influence of TDMAAs acceptor precursor on performance improvement of HgCdTe photodiodes

Acta Physica Polonica A

Volumn 118, Issue 6, 2010, Pages 1199-1204

  Madejczyk, P ^a   Gawron, W ^a   Piotrowski, A ^b   Klos, K ^b   Rutkowski, J ^a   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b VIGO SYSTEM S A   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; PHYSICS;

ACCEPTOR DOPANTS; ACCEPTOR DOPING; CONTACT LAYERS; HGCDTE PHOTODIODES; KEY FACTORS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; PHOTOVOLTAIC DETECTOR; RECOMBINATION CENTRES;

PHOTODIODES;

EID: 78650474072     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.118.1199     Document Type: Article

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