Heavy-ion induced current through an oxide layer

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 1, 2007, Pages 309-313

  Takahashi, Yoshihiro ^a   Ohki, Takahiro ^a   Nagasawa, Takaharu ^a   Nakajima, Yasuhito ^a   Kawanabe, Ryu ^a   Ohnishi, Kazunori ^a   Hirao, Toshio ^b   Onoda, Shinobu ^b   Mishima, Kenta ^b,c   Kawano, Katsuyasu ^c   Itoh, Hisayoshi ^b  

^a NIHON UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Heavy ion induced current; MOS; Single event effects; Single event transient

Indexed keywords

GATES (TRANSISTOR); HEAVY IONS; ION BOMBARDMENT; MOS CAPACITORS; OXIDE FILMS; TRANSIENT ANALYSIS;

HEAVY ION INDUCED CURRENT; OXIDE LAYERS; SEMICONDUCTOR SURFACES; TRANSIENT GATE CURRENT;

ELECTRIC CURRENT MEASUREMENT;

EID: 34249901798     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.010     Document Type: Article

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