The theory of ion beam induced charge in metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

  Vizkelethy, G ^a   Brice, D K ^a   Doyle, B L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDE (BOX); CHARGE COLLECTION; GUNN THEOREM; ION BEAM INDUCED CHARGE;

CHARGE DENSITY; ION BEAMS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

MOS DEVICES;

EID: 34247191259     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716870     Document Type: Article

References (15)

1. F. B. McLean and T. R. Oldham, IEEE Trans. Nucl. Sci. NS-29, 2018 (1982).
2. T. R. Oldham and F. B. McLean, IEEE Trans. Nucl. Sci. NS-30, 4493 (1983).
3. R. M. Gilbert, G. K. Obrevo, and J. Schifano, IEEE Trans. Nucl. Sci. NS-32, 4098 (1985).
4. M. A. Xapsos, A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, T. Palmer, P. T. McDonald, and S. L. Swickert, IEEE Trans. Nucl. Sci. 34, 1214 (1987).
5. O. Musseau, J. L. Leray, V. Ferlet, A. Umbert, and Y. M. Coic, IEEE Trans. Nucl. Sci. 38, 1226 (1991).
6. P. E. Dodd et al., IEEE Trans. Nucl. Sci. 48, 1893 (2001).
7. G. Vizkelethy, P. E. Dodd, J. R. Schwank, M. R. Shaneyfelt, D. S. Walsh, F. D. McDaniel, and B. L. Doyle, Nucl. Instrum. Methods Phys. Res. B 210, 211 (2003).
8. J. R. Schwank et al., IEEE Trans. Nucl. Sci. 49, 2937 (2002).
9. G. Vizkelethy, B. L. Doyle, D. K. Brice, P. E. Dodd, M. R. Shaneyfelt, and J. R. Schwank, Nucl. Instrum. Methods Phys. Res. B 231, 467 (2005).
10. V. Ferlet-Cavrois, P. Paillet, J. R. Schwank, G. Vizkelethy, M. R. Shaneyfelt, J. Baggio, A. Torres, and O. Flament, IEEE Trans. Nucl. Sci. 50, 2208 (2003).
11. W. Shockley, J. Appl. Phys. 9, 635 (1938).
12. S. Ramo, Proc. IRE 27, 584 (1939).
13. J. B. Gunn, Solid-State Electron. 7, 739 (1964).
14. Y. Tsividis, Operation and Modeling the MOS Transistor (McGraw-Hill, New York, 1999), pp. 50-90.
15. M. B. H. Breese, J. Appl. Phys. 74, 3789 (1993).