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Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

Temperature dependence of 1/f noise mechanisms in silicon nanowire biochemical field effect transistors

(4) Rajan, Nitin K a Routenberg, David A a Chen, Jin a Reed, Mark A a

a Yale University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CORRELATED MOBILITY FLUCTUATIONS; FLUCTUATORS; LORENTZIAN SPECTRUM; LOW TEMPERATURES; LOW-FREQUENCY NOISE; NUMBER FLUCTUATIONS; RANDOM TELEGRAPH SIGNALS; SILICON NANOWIRES; STRONG INVERSION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

NANOWIRES; TELEGRAPH;

FIELD EFFECT TRANSISTORS;

EID: 78650402454 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3526382 Document Type: Article

Times cited : (25)

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