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Physical Review Letters

Volumn 96, Issue 18, 2006, Pages

Decomposition of 1/f noise in AlxGa1-xAs/GaAs hall devices

(4) Müller, Jens a,b Von Molnár, Stephan a,b Ohno, Yuzo b Ohno, Hideo b

a FLORIDA STATE UNIVERSITY (United States)

b TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC NOISE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; SWITCHING;

LORENTZIAN SPECTRUM; POWER SPECTRAL DENSITIES (PSD); RANDOM TELEGRAPH SIGNAL;

HALL EFFECT DEVICES;

EID: 33646394597 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.96.186601 Document Type: Article

Times cited : (31)

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