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Volumn 97, Issue 24, 2010, Pages

Anisotropic transport properties in InAs/AlSb heterostructures

(10) Moschetti, G a Zhao, H a Nilsson, P A a Wang, S a Kalabukhov, A a Dambrine, G a,b Bollaert, S a,b Desplanque, L a,b Wallart, X a,b Grahn, J a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC TRANSPORT; DISLOCATION PATTERN; ELECTRICAL ANALYSIS; HALL MEASUREMENTS; HETEROSTRUCTURES; INP SUBSTRATES; MAXIMUM DRAIN CURRENT; PEAK TRANSCONDUCTANCE; ROOM TEMPERATURE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ANISOTROPY; CRYSTALS; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; HETEROJUNCTIONS; TRANSPORT PROPERTIES; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78650384091 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3527971 Document Type: Article

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.