SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 325-329

Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness

(6) Peiro F a Ferrer, J C a Cornet, A a Morante, J R a Beck, M b Py, M A b

a Dept Fis Apl i Electrònica ^* (Spain)

b EPFL (Switzerland)

Author keywords

Hall mobilities; Temperature; Transmission electron microscopy

Indexed keywords

ANISOTROPY; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

HALL MOBILITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031069199 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01790-4 Document Type: Article

Times cited : (2)

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