Performances and limitations of InAs/InAlAs metamorphic heterostructures on InP for high mobility devices

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Wallart, X ^a   Lastennet, J ^a   Vignaud, D ^a   Mollot, F ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRON TRANSFER; HIGH MOBILITY DEVICES; LATTICE MISMATCH;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRON MOBILITY; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

HETEROJUNCTIONS;

EID: 23744510722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2000338     Document Type: Article

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