Effect of electron blocking layer on efficiency droop in blue InGaN/GaN based light-emitting diodes

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 4, Issue 8, 2010, Pages 1106-1110

  Singh, S ^a   Robidas, D ^a   Rohila, N ^a   Pal, S ^a   Dhanavantri, C ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Efficiency droop; Electron blocking layer (EBL); Light emitting diodes (LEDs); Multi quantum well (MQW)

Indexed keywords

DIODES; EFFICIENCY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

EFFICIENCY DROOPS; ELECTRON BLOCKING LAYER; GAN/INGAN; HIGH CURRENTS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; MULTIQUANTUM WELLS;

QUANTUM EFFICIENCY;

EID: 78650382989     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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