Effect of thickness of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in GaN-Based LEDs

IEEE Photonics Technology Letters

Volumn 20, Issue 13, 2008, Pages 1142-1144

  Jang, Chung Hsun ^a   Sheu, J K ^a   Tsai, C M ^a   Shei, S C ^b   Lai, W C ^a   Chang, S J ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

AlGaN; Electron blocking layer (EBL); Electrostatic discharge (ESD); GaN light emitting diode (LED)

Indexed keywords

ALGAN; ELECTRON BLOCKING LAYER (EBL); ELECTROSTATIC DISCHARGE (ESD); ESD ENDURANCES; FORWARD VOLTAGES; GAN LEDS; GAN LIGHT-EMITTING DIODE (LED); GAN-BASED LEDS; GAN-BASED LIGHT-EMITTING DIODES; GROWTH PROCESS; LIGHT OUTPUTS; LOW TEMPERATURES; MULTIPLE-QUANTUM WELLS; P TYPES; SURFACE PITS; THREADING DISLOCATIONS;

CURRENT DENSITY; DIODES; DURABILITY; ELECTRONS; ELECTROSTATIC DISCHARGE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

ELECTROSTATIC DEVICES;

EID: 65449117230     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.924886     Document Type: Article

References (7)

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