Layout-related stress effects on radiation-induced leakage current

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3288-3292

  Rezzak, Nadia ^a   Schrimpf, Ronald D ^a   Alles, Michael L ^a   Zhang, En Xia ^a   Fleetwood, Daniel M ^a   Li, Yanfeng Albert ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b Accelicon Technologies Inc   (United States)

Author keywords

Active space distance; mechanical stress; MOSFET off state leakage current; shallow trench isolation (STI); sidewall doping; total ionizing dose (TID)

Indexed keywords

ACTIVE SPACES; MECHANICAL STRESS; MOS-FET; SHALLOW TRENCH ISOLATION; SIDE-WALL DOPING; TOTAL IONIZING DOSE;

DOPING (ADDITIVES); IONIZING RADIATION; IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; RADIATION EFFECTS; STRESSES;

SEMICONDUCTING SILICON;

EID: 78650320191     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2083690     Document Type: Conference Paper

References (21)

1. "Sentaurus Process User Guide," ver. Z-2007.03, Synopsys, Mountain View, CA, 2007.
2. R. Li and L. Yu, "A comprehensive study of reducing the STI mechanical stress effect on channel-width-dependent I dsat ," Semicond. Sci. Technol., vol. 22, pp. 1292-1297, 2007.
3. P. B. Y. Tan, A. V. Kordesch, and O. Sidek, "CMOS shallow trench isolation x-stress effect on channel width for 130 nm technology," in Proc. ICSICT, Oct. 2006, pp. 478-480.
4. M. Miyamoto, H. Ohta, Y. Kumagai, Y. Sonobe, K. Ishibashi, and Y. Tainaka, "Impact of reducing STI-induced stress on layout dependence of MOSFET characteristics," IEEE Trans. Electron Dev., vol. 51, no. 3, pp. 440-443, Mar. 2004.
5. H. Park, K. S. Jones, J. A. Slinkman, and M. E. Law, "The effects of strain on dopant diffusion in silicon," IEDM Tech. Dig., pp. 303-306, Dec. 1993.
6. C.-Y. Hsieh and M.-J. Chen, "Electrical measurement of local stress and lateral diffusion near source/drain extension corner of uniaxially stressed n-MOSFETS," IEEE Trans. Electron Dev., vol. 55, no. 3, pp. 844-849, Mar. 2008.
7. K. Su, Y. Sheu, and C. Lin, "A scalable model for STI mechanical stress effect on layout dependence of MOS electrical characteristics," in Proc. CICC, Sep. 2003, pp. 245-248.
8. V. Joshi, B. Cline, D. Sylvester, D. Blaauw, and K. Agarwal, "Stress aware layout optimization," in Proc. ACM ISPD, Apr. 2008, pp. 168-174.
9. P. B. Y. Tan, A. V. Kordesch, and O. Sidek, "Layout dependence effect on high speed CMOS transistor leakage current," in Proc. APACE, Dec. 2005, pp. 318-321.
10. V. Joshi, B. Cline, D. Sylvester, D. Blaauw, and K. Agarwal, "Leakage power reduction using stress-enhanced layouts," in Proc. ACM/IEEE 45th DAC, Anaheim, CA, Jun. 2008, pp. 912-917.
11. T. Lee, Y. Fang, Y. Chiang, H. Y. Chiu, M. Chen, and O. Cheng, "Effect of STI stress on leakage and Vccmin of a sub-65 nm node low-power SRAM," J. Phys. D, Appl. Phys., vol. 41, p. 195101, 2008.
12. Y.-M. Sheu, S.-J. Yang, C.-C. Wang, C.-S. Chang, L.-P. Huang, T.-Y. Huang, M.-J. Chen, and C. H. Diaz, "Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs," IEEE Trans. Electron Dev., vol. 52, no. 1, pp. 30-38, Jan. 2005.
13. H. Park, S. K. Dixit, Y. S. Choi, R. D. Schrimpf, D. M. Fleetwood, T. Nishida, and S. E. Thompson, "Total ionizing dose effects on strained Hfo2 -based MOSFETs," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pt. 1, pp. 2981-2985, Dec. 2008.
14. K. Kasama, F. Toyokawa, M. Tsukuji, M. Sakamoto, and K. Kobayashi, "Mechanical stress dependence of radiation effects in MOS structures," IEEE Trans. Nucl. Sci., vol. NS-33, no. 6, pp. 1210-1215, Dec. 1986.
15. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2584-2592, Dec. 1998.
16. J. Y. Chen, R. C. Henderson, R. Martinand, and D. O. Patterson, "Enhanced radiation effects on submicron narrow-channel NMOS," IEEE Trans. Nucl. Sci., vol. NS-29, no. 6, pp. 1681-1684, Dec. 1982.
17. D. Kim, S. Lee, T. K. Oh, S. Y. Cha, S. J. Hong, and B. Kang, "Influence of dummy active patterns on mechanical stress induced by spin on glass filled shallow trench isolation in n-MOSFETs," 2010, unpublished.
18. C. Herring and E. Vogt, "Transport and deformation-potential theory for many valley semiconductors with anisotropic scattering," Phys. Rev., vol. 101, no. 3, pp. 944-961, Feb. 1956.
19. I. Balslev, "Influence of uniaxial stress on the indirect absorption edge in silicon and germanium," Phys. Rev., vol. 143, no. 2, pp. 636-647, Mar. 1966.
20. J.-S. Lim, S. E. Thompson, and J. G. Fossum, "Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs," IEEE Electron Dev. Lett., vol. 25, no. 11, pp. 731-733, Nov. 2004.
21. W. A. Brantley, "Calculated elastic constants for stress problems associated with semiconductor devices," J. Appl. Phys., vol. 44, no. 1, pp. 534-535, 1973.