Mathematical modeling of nanoscale MOS capacitance in the presence of depletion and energy quantization in a poly-silicon gate

Journal of Semiconductors

Volumn 31, Issue 11, 2010, Pages 1140011-1140014

  Chaudhry, Amit ^a   Roy, J N ^b  

^a PANJAB UNIVERSITY   (India)

^b Solar Semiconductor Private Limited   (India)

Author keywords

BSIM; Inversion layers; MOS devices; Poly depletion; Poly quantization; Quantization

Indexed keywords

BSIM; INVERSION LAYER; POLY-DEPLETION; POLY-QUANTIZATION; QUANTIZATION;

MOSFET DEVICES; POLYSILICON; SEMICONDUCTING SILICON;

MOS DEVICES;

EID: 78650283011     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/11/114001     Document Type: Article

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