Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

Journal of Electronic Materials

Volumn 35, Issue 12, 2006, Pages

  Sarusi, G ^a   Moshe, O ^a   Khatsevich, S ^a   Rich, D H ^a   Salzman, J ^b   Meyler, B ^b   Shandalov, M ^a   Golan, Y ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

AlN Si heterostructures; Cathodoluminescence; III nitride thin films; Micro cracks; Thermal stress

Indexed keywords

ALN/SI HETEROSTRUCTURES; EXCITONIC EMISSION; III-NITRIDE THIN FILMS;

CATHODOLUMINESCENCE; EXCITONS; HETEROJUNCTIONS; MICROCRACKS; SILICON COMPOUNDS; THERMAL STRESS; THIN FILMS;

ALUMINUM NITRIDE;

EID: 33846459393     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0328-1     Document Type: Conference Paper

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