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Volumn 108, Issue 10, 2010, Pages

Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties

(9) Dialynas, G E a Kalliakos, S a Xenogianni, C a Androulidaki, M b Kehagias, T c Komninou, P c Savvidis, P G a,b Hatzopoulos, Z a,b Pelekanos, N T a,b

a UNIVERSITY OF CRETE (Greece)

b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; DISLOCATION-FREE; EXCITATION POWER; GROWTH CONDITIONS; GROWTH PARAMETERS; INAS; LARGE ASPECT RATIO; MISFIT DISLOCATIONS; OPTICALLY ACTIVE; PIEZO-ELECTRIC FIELDS; QD EMISSIONS; QUANTUM DASHES; QUANTUM DOT; QUANTUM DOTS; SMALL SIZE; STRUCTURAL AND OPTICAL PROPERTIES; TRUNCATED PYRAMIDS; WETTING LAYER;

ASPECT RATIO; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PIEZOELECTRICITY; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650258399 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3510490 Document Type: Conference Paper

Times cited : (18)

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- Strictly speaking, in the 1D model of Fig., the WL thickness is "hidden" in the QD height. However, this makes no big difference since, as we show in the analysis of Fig., the WL is smaller than 0.39 nm.

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