InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 11, 2006, Pages 3988-3991

  Zervos, M ^a   Xenogianni, C ^a,b   Deligeorgis, G ^a   Androulidaki, M ^a   Savvidis, P G ^a,b   Hatzopoulos, Z ^a,b   Pelekanos, N T ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFTING; CRYSTALLOGRAPHIC DIRECTIONS; GROWTH RATES; INAS QUANTUM DOTS; INDUCED ELECTRIC FIELDS; INTERNATIONAL CONFERENCES; PHOTOLUMINESCENCE SPECTRUM; POLAR SUBSTRATES; QUANTUM DOTS; SELF ORGANIZING;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; EPITAXIAL GROWTH; GALLIUM ALLOYS; INDIUM ARSENIDE; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41349114305     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200671616     Document Type: Conference Paper

References (4)

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