InAs nanostructures on polar GaAs surfaces

International Journal of Nanotechnology

Volumn 6, Issue 1-2, 2009, Pages 124-136

  Dialynas, G E ^a,b   Pantazis, A ^a,b   Hatzopoulos, Z ^a,b   Androulidaki, M ^a,c   Tsagaraki, K ^a,c   Konstantinidis, G ^a,c   Xenogianni, C ^a,b   Trichas, E ^a,b   Tsintzos, S ^a,b   Savvidis, P G ^a,b   Pelekanos, N T ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c Microelectronics Research Group of FORTH

Author keywords

High index substrates; Nanostructure; Nanotechnology; Optical properties; Photoluminescence; Quantum dots; Self assembled

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; GALLIUM ARSENIDE; GROWTH TEMPERATURE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

BIEXCITON BINDING ENERGY; EXCITATION INTENSITY; HIGH-INDEX SUBSTRATES; METALLIC APERTURES; PHOTOLUMINESCENCE MEASUREMENTS; PIEZO-ELECTRIC FIELDS; SELF-ASSEMBLED; SHAPE AND SIZE;

III-V SEMICONDUCTORS;

EID: 57149136019     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/ijnt.2009.021712     Document Type: Article

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