Characterizations of nanoembossed Pb (Zr0.3, Ti0.7) O3 ferroelectric films

Journal of Vacuum Science and Technology B

Volumn 28, Issue 6, 2010, Pages

  Shen, Zhenkui ^a   Chen, Zhihui ^a   Lu, Qian ^a   Jiang, Anquan ^a   Qiu, Zhijun ^a   Qu, Xinping ^a   Chen, Yifang ^b   Liu, Ran ^a  

^a FUDAN UNIVERSITY   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC THIN FILMS; SCANNING PROBE MICROSCOPY; X RAY DIFFRACTION;

FERROELECTRIC CHARACTERISTICS; FERROELECTRIC THIN-FILMS; LATERAL SIZES; MASS STORAGE; NANOEMBOSSING; PIEZORESPONSE FORCE MICROSCOPY; PROPERTY; PZT; PZT FILM; STRUCTURAL CHARACTERIZATION;

FERROELECTRICITY;

EID: 78650112882     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3497018     Document Type: Article

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