Influences of embossing technology on Pb(Zr0.3,Ti0.7)O3 ferroelectric thin film

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 869-871

  Shen, Zhen Kui ^a   Chen, Zhi Hui ^a   Qiu, Zhi Jun ^a   Lu, Bing rui ^a,b   Wan, Jing ^a   Deng, Shao Ren ^a   Jiang, An Quan ^a   Qu, Xin Ping ^a   Liu, Ran ^a   Chen, Yifang ^b  

^a ASIC and System   (China)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

Embossing; Ferroelectric film; Hysteresis loops

Indexed keywords

ELECTRICAL CHARACTERISTIC; EMBOSSING; FERROELECTRIC PROPERTY; FERROELECTRIC RANDOM ACCESS MEMORIES; FERROELECTRIC TESTERS; MEMORY APPLICATIONS; PATTERN PROFILE; PATTERNING PROCESS; PREFERRED ORIENTATIONS; PZT; PZT FILM; PZT THIN FILM; SEM; XRD;

FERROELECTRIC DEVICES; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; HYSTERESIS; HYSTERESIS LOOPS; LEAD; MAGNETIC MATERIALS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; RANDOM ACCESS STORAGE; SEMICONDUCTING LEAD COMPOUNDS; THIN FILM DEVICES; ZIRCONIUM;

FERROELECTRICITY;

EID: 76949108946     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.12.049     Document Type: Article

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