Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 3234-3238

  Hsieh, K C ^a   Chen, H L ^a   Lin, C H ^b   Lee, C Y ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; MOLDS; PRESSURE EFFECTS; SURFACE ACTIVE AGENTS;

FERROELECTRIC BILAYERS; GEL FILMS; NANOIMPRINT LITHOGRAPHY; ULTRAHIGH PRESSURE;

FERROELECTRIC THIN FILMS;

EID: 33845257864     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2395958     Document Type: Article

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