Resistive switching in Ge0.3Se0.7 films by means of copper ion migration

Zeitschrift fur Physikalische Chemie

Volumn 221, Issue 11-12, 2007, Pages 1469-1478

  Schindler, C ^a   Guo, X ^a   Besmehn, A ^a   Waser, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Chalcogenide films; Ion migration; Non volatile memory; Resistive switching

Indexed keywords

COPPER; DIGITAL STORAGE; GERMANIUM COMPOUNDS; METAL IONS; PLATINUM COMPOUNDS; SWITCHING;

CHALCOGENIDE FILMS; HIGH STORAGE DENSITY; HIGH-RESISTANCE STATE; ION MIGRATION; LOW-RESISTANCE STATE; NON-VOLATILE MEMORY; NONDESTRUCTIVE READ-OUT; RESISTIVE SWITCHING;

SELENIUM COMPOUNDS;

EID: 36849089977     PISSN: 09429352     EISSN: None     Source Type: Journal    
DOI: 10.1524/zpch.2007.221.11-12.1469     Document Type: Article

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