Photovoltaic effect in Ge nanocrystals/c-silicon heterojunctions devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 1889-1893

  Yao, Y ^a   Zhang, B ^a   Green, M A ^a   Conibeer, G ^a   Shrestha, S K ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLINE SILICON SUBSTRATES; ELECTRICAL MATERIALS; FOUR-POINT PROBE MEASUREMENTS; GE NANOCRYSTALS; I - V CURVE; IDEALITY FACTORS; MATRIX; NUMERICAL FITTING; PHOTOVOLTAIC PROPERTY; POTENTIAL APPLICATIONS; QUASI-STEADY STATE; RECTIFICATION EFFECTS; SERIES RESISTANCES; SILICON HETEROJUNCTIONS; TEM; THIN FILM TANDEMS;

CURVE FITTING; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; GALLIUM; GALLIUM ALLOYS; GERMANIUM; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON COMPOUNDS; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOVOLTAIC EFFECTS;

EID: 78650090918     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616255     Document Type: Conference Paper

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