Study of buffer and epitaxy technology in two-step growth of aluminium nitride

Science in China, Series E: Technological Sciences

Volumn 51, Issue 11, 2008, Pages 1881-1885

  Liu, QiJia ^a   Zhang, Rong ^a   Xie, ZiLi ^a   Liu, Bin ^a   Xu, Feng ^a   Yao, Jing ^a   Nie, Chao ^a   Xiu, XiangQian ^a   Han, Ping ^a   Zheng, YouDou ^a   Gong, HaiMei ^b  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

AlN; MOCVD; Optical reflectivity; Optical transmission spectra; XRD

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; ANNEALING; CORUNDUM; CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT TRANSMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; REFLECTION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SILANES;

ALN; MOCVD; OPTICAL REFLECTIVITY; OPTICAL TRANSMISSION SPECTRA; XRD;

EPITAXIAL GROWTH;

EID: 54149109360     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0132-7     Document Type: Article

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