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Volumn , Issue , 2010, Pages 452-455

A compact model for double gate carbon nanotube FET

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FET; COMPACT MODEL; DOUBLE GATE; ELECTROSTATIC MODELLING; LANDAUER; NEW TECHNOLOGIES; QUASI-BALLISTIC TRANSPORT; RING OSCILLATOR CIRCUITS; SCHOTTKY BARRIERS; SIGNIFICANT MECHANISM;

EID: 78649938851     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618180     Document Type: Conference Paper
Times cited : (4)

References (10)
  • 1
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    • DOI 10.1109/TNANO.2005.851427
    • Y.-M. Lin, J. Appenzeller, J. Knoch, and Ph. Avouris, "High performance carbon nanotube field-effect transistor with tunable polarities, " IEEE Trans. On Nanotech., vol. 4, No. 5, pp. 481-489, September 2005. (Pubitemid 41441339)
    • (2005) IEEE Transactions on Nanotechnology , vol.4 , Issue.5 , pp. 481-489
    • Lin, Y.-M.1    Appenzeller, J.2    Knoch, J.3    Avouris, P.4
  • 4
    • 54849404161 scopus 로고    scopus 로고
    • Tunneling phenomena in carbon nanotube field-effect transistors
    • Knoch, Joachim; Appenzeller, Joerg "Tunneling phenomena in carbon nanotube field- effect transistors", physica status solidi (a), vol. 205, issue 4, pp. 679-694 (2008).
    • (2008) Physica Status Solidi (A) , vol.205 , Issue.4 , pp. 679-694
    • Knoch, J.1    Appenzeller, J.2
  • 6
    • 70350070227 scopus 로고    scopus 로고
    • Implementation of tunnelling phenomena in a CNTFET compact model
    • October
    • S. Fregonese, C. Maneux, T. Zimmer, "Implementation of Tunnelling Phenomena in a CNTFET Compact Model", IEEE TED, October 2009.
    • (2009) IEEE TED
    • Fregonese, S.1    Maneux, C.2    Zimmer, T.3
  • 7
    • 23144462910 scopus 로고    scopus 로고
    • The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors
    • DOI 10.1021/nl0508624
    • Zhihong Chen, Joerg Appenzeller, Joachim Knoch, Yu-ming Lin, and Phaedon Avouris, "The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors", Nano Letters, 2005, Vol. 5, No. 7, 1497-1502. (Pubitemid 41084442)
    • (2005) Nano Letters , vol.5 , Issue.7 , pp. 1497-1502
    • Chen, Z.1    Appenzeller, J.2    Knoch, J.3    Lin, Y.-M.4    Avouris, P.5
  • 8
    • 67650100004 scopus 로고    scopus 로고
    • Performance analysis of 60-nm gate-length III-V InGaAs HEMTs: Simulations versus experiments
    • Neophytou, N., Rakshit, T., Lundstrom, M.S., "Performance analysis of 60-nm gate-length III-V InGaAs HEMTs: Simulations versus experiments", IEEE TED 56 (7), pp. 1377-1387.
    • IEEE TED , vol.56 , Issue.7 , pp. 1377-1387
    • Neophytou, N.1    Rakshit, T.2    Lundstrom, M.S.3
  • 9
    • 36849067875 scopus 로고    scopus 로고
    • A compact SPICE model for carbonnanotube field-effect transistors including nonidealities and its application - Part I: Model of the intrinsic channel region (2007)
    • Deng J., Wong H.-S.P. "A compact SPICE model for carbonnanotube field-effect transistors including nonidealities and its application - Part I: Model of the intrinsic channel region (2007)", IEEE TED, 54 (12), pp. 3186-3194.
    • IEEE TED , vol.54 , Issue.12 , pp. 3186-3194
    • Deng, J.1    Wong, H.-S.P.2
  • 10
    • 58149269497 scopus 로고    scopus 로고
    • Analytical Ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection
    • D. Akinwande, a- J. Liang, S. Chong, Y. Nishi, and H.-S. PhilipWong " Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection", JAP 104, 124514 -2008.
    • (2008) JAP , vol.104 , pp. 124514
    • Akinwande, D.1    Liang, A.J.2    Chong, S.3    Nishi, Y.4    Philipwong, H.-S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.