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Volumn 519, Issue 5, 2010, Pages 1677-1680
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Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
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Author keywords
In situ stem generation; Nanocrystals; Nonvolatile memory; Tungsten
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Indexed keywords
CHARGE STORAGE;
CHEMICAL COMPOSITIONS;
DATA RETENTION;
ELECTRICAL MEASUREMENT;
EMISSION SPECTRUMS;
IN-SITU;
IN-SITU STEAM GENERATION;
MEMORY EFFECTS;
NANOCRYSTAL MEMORY DEVICES;
NON-VOLATILE MEMORIES;
OXIDIZING CONDITIONS;
TRANSMISSION ELECTRON;
TRAPPING LAYERS;
X RAY PHOTONS;
CHARGE TRAPPING;
CHEMICAL VAPOR DEPOSITION;
EMISSION SPECTROSCOPY;
FLASH MEMORY;
OXYGEN;
SEMICONDUCTOR STORAGE;
SILICON COMPOUNDS;
STEAM GENERATORS;
TRANSMISSION ELECTRON MICROSCOPY;
TUNGSTEN;
NANOCRYSTALS;
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EID: 78649756495
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.08.167 Document Type: Conference Paper |
Times cited : (8)
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References (16)
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