Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Chen, Wei Ren ^a   Chang, Ting Chang ^b   Yeh, Jui Lung ^a   Sze, S M ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CHARGE TRAPPING; DATA STORAGE EQUIPMENT; INERT GASES; MULTILAYERS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NICKEL ALLOYS; NICKEL COMPOUNDS; NITRIDES; PHOTOELECTRON SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR STORAGE; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURES; CHARGE STORAGE ABILITIES; CHEMICAL STATES; FLOATING GATES; HYSTERESIS CHARACTERISTICS; LOW TEMPERATURES; MEMORY EFFECTS; MEMORY STRUCTURES; MULTILAYER STRUCTURES; NANOCRYSTAL MEMORIES; NANOCRYSTAL STRUCTURES; NITRIDE LAYERS; NON VOLATILES; NONVOLATILE MEMORIES; NONVOLATILE-MEMORY APPLICATIONS; SILICIDE NANOCRYSTALS; SINGLE LAYERS; TRANSMISSION ELECTRON MICROSCOPES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 56349088954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3006126     Document Type: Article

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