Morphology Analysis of Si Island Arrays on Si(001)

Nanoscale Research Letters

Volumn 5, Issue 12, 2010, Pages 1882-1887

  Gonzalez Gonzalez A ^a   Alonso, M ^a   Navarro, E ^a   Sacedon J L ^a   Ruiz, A ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Molecular beam epitaxy; Morphology analysis; Scanning probe microscopy; Self assembly; Silicon nanostructures

Indexed keywords

AFM; HETEROEPITAXIAL; HOMOEPITAXIAL; IN-PLANE; MAGNETOELECTRONIC DEVICES; MASS TRANSPORT; MORPHOLOGY ANALYSIS; NANO-METER-SCALE; SCANNING PROBES; SELF-ASSEMBLED; SEMICONDUCTOR SYSTEMS; SI (001) SUBSTRATE; SI LAYER; SI(0 0 1); SILICON NANOSTRUCTURES; SLOPE DISTRIBUTION; SPECIFIC INFORMATION; SUBSTRATE SURFACE; SUBSTRATE TEMPERATURE; SURFACE NANOSTRUCTURING; SURFACE ORIENTATION MAPS; TOPOGRAPHIC IMAGES; VOLUME ANALYSIS;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MORPHOLOGY; NANOSTRUCTURES; PROBES; SELF ASSEMBLY; SILICON; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649729777     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9725-8     Document Type: Article

References (24)

1. I. Berbezier, A. Ronda, Surf Sci. Rep. 64, 47 (2009).
2. J. Stangl, V. Holy, G. Bauer, Rev. Modern Phys. 76, 725 (2004).
3. C. Teichert, Phys. Rep. 365, 335 (2002).
4. A. González-González, J. L. Sacedón, C. Polop, E. Rodríguez-Cañas, J. A. Aznárez, E. Vasco, J. Vac. Sci. Technol. A 27, 1012 (2009).
5. N. Galiana, P. P. Martin, C. Munuera, M. Varela, C. Ocal, M. Alonso, A. Ruiz, Mat. Sci. Semicond. Process 12, 52 (2009).
6. M. Siegert, Phys. Rev. Lett. 81, 5481 (1998).
7. D. C. Vernon, M. Siegert, M. Plischke, Phys. Rev. B. 59, 15523 (1999).
8. J. Zhu, J. G. Ekerdt, J. Crystal Growth 261, 479 (2004).
9. A. A. Shklyaev, M. Ichikawa, Phys. Rev. B 65, 45307 (2001).
10. L. H. Nguyen, C. Renard, V. Yam, F. Fossard, D. Débarre, D. Bouchier, Superlattices Microstruct. 44, 348 (2008).
11. K. A. Bratland, Y. L. Foo, J. A. N. T. Soares, T. Spila, P. Desjardins, J. E. Greene, Phys. Rev. B 67, 125322 (2003).
12. B. Z. Nosho, B. R. Bennett, E. H. Aifer, M. Goldenberg, J. Crystal Growth 236, 155 (2002).
13. B. Voigtländer, Surf Sci. Rep. 43, 127 (2001).
14. U. Denker, O. Schmidt, N.-Y.-J. Philipp, K. Eberl, Appl. Phys. Lett 78, 3723 (2001).
15. T. Merdzhanova, S. Kiravittaya, A. Rastelli, M. Stoffel, U. Denker, O. G. Schmidt, Phys. Rev. Lett. 96, 226103 (2006).
16. J. A. Floro, G. A. Lucadamo, E. Chason, L. B. Freund, M. Sinclair, R. D. Twesten, Q. Hwang, Phys. Rev. Lett. 80, 4717 (1998).
17. J. A. Floro, G. A. Lucadamo, E. Chason, L. B. Freund, M. Sinclair, R. D. Twesten, Q. Hwang, Phys. Rev. B. 59, 1990 (1999).
18. I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, A. M. Baró, Rev. Sci. Instrum. 78, 013705 (2007).
19. E. Palacios-Lidón, L. Guanter, J. Zúñiga-Pérez, V. Muñoz-SanJosé, J. Colchero, Small 3, 474 (2007).
20. B. Sanduijav, D. Matei, G. Chen, G. Springholz, Phys. Rev. B 80, 125329 (2009).
21. A. Rastelli, H. von Känel, Surf. Sci. Lett. 515, L493 (2002).
22. S. A. Chaparro, Y. Zhang, J. Drucker, Appl. Phys. Lett. 76, 3534 (2000).
23. U. Denker, A. Rastelli, M. Stoffel, J. Tersof, G. Katsaros, G. Costantini, K. Kern, N. Y. Jin-Phillipp, D. E. Jesson, O. G. Schmidt, Phys. Rev. Lett. 94, 216103 (2005).
24. G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. von Känel, A. M. Bittner, J. Tersof, U. Denker, O. G. Schmidt, G. Costantini, K. Kern, Surf. Sci. 600, 2608 (2006).