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Journal of Crystal Growth

Volumn 236, Issue 1-3, 2002, Pages 155-164

Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

(4) Nosho, B Z a Bennett, B R a Aifer, E H a Goldenberg, M b

a NAVAL RESEARCH LABORATORY (United States)

b SFA INC (United States)

Author keywords

A1. Atomic force mircoscopy; A1. Surface structure; A3. Molecular beam epitaxy; B1. Antimondies

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE STRUCTURE;

HOMOEPITAXIAL FILM GROWTH;

EPITAXIAL GROWTH;

EID: 0036499297 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02392-2 Document Type: Article

Times cited : (40)

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