Modeling and parameter extraction of SiGe:C HBT's with HICUM for the emerging terahertz era

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Volumn , Issue , 2010, Pages 25-28

  Ardouin, B ^a   Raya, C ^a   Schroter, M ^b,c   Pawlak, A ^b   Celi D ^d   Pourchon, F ^d   Aufinger, K ^e   Meister, T F ^e   Zimmer, T ^f  

^a XMOD TECHNOLOGIES   (France)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d STMICROELECTRONICS   (France)

^e INFINEON TECHNOLOGIES AG   (Germany)

^f UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FUTURE TECHNOLOGIES; MEASUREMENT AND SIMULATION; MODEL DEVELOPMENT; PHYSICS-BASED; SCALABLE MODEL; SIGE:C-HBT; TERA HERTZ;

SILICON ALLOYS;

PARAMETER EXTRACTION;

EID: 78649628548     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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