Compact layout and bias-dependent base-resistance modeling for advanced SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 55, Issue 7, 2008, Pages 1693-1701

  Schröter, Michael ^a,b   Krause, Julia ^a   Lehmann, Steffen ^a   Céli, Didier ^c  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c STMICROELECTRONICS   (France)

Author keywords

Base resistance; Bipolar transistors; HICUM; High frequency circuit design; Transistor modeling

Indexed keywords

ASPECT RATIO; DESCRIBING FUNCTIONS; DIMENSIONAL STABILITY; FUNCTION EVALUATION; GERMANIUM; HEALTH; SEMICONDUCTING SILICON COMPOUNDS;

ANALYTICAL EQUATIONS; COMPACT LAYOUT; DEVICE SIMULATIONS; INTERNAL BASE RESISTANCE; LARGE RANGE; LAYOUT DIMENSIONS; RESISTANCE MODELING; RESISTANCE RATIOS; SIGE HBTS; SILICON GERMANIUM (SI GE);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 46649108734     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.924440     Document Type: Article

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